STM4800A Datasheet (SamHop Microelectronics) - N-Channel E nhancement Mode Field Effect Transistor

STM4800A, N-Channel E nhancement Mode Field Effect Transistor

S T M4800A S amHop Microelectronics C orp.

Dec 30 2004 ver1.1 www.DataSheet4U.com N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) Max ID 8.2A R DS (ON) S uper high dense cell design for low R DS (ON ).

18.5 @ V G S = 10V 33 @ V G S = 4.5V R ugged and reliable.

S urface Mount P ackage.

S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C onti