STM4633 - P-Channel Enhancement Mode Field Effect Transistor
Datasheet Summary
Features
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID
-7.0A
R DS(ON) (m Ω) Max
33 @ VGS=-10V 52 @ VGS=-4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D.
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Full PDF Text Transcription
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STM4633
S a mHop Microelectronics C orp.
Ver 1.0
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
ID
-7.0A
R DS(ON) (m Ω) Max
33 @ VGS=-10V 52 @ VGS=-4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C IDM E AS PD TJ, TSTG -Pulsed
b d
Limit -30 ±20 -7 -5.6 -40 20 2.5 1.