STM4470E Datasheet (SamHop Microelectronics) - N-channel Enhancement Mode Field Effect Transistor

STM4470E, N-channel Enhancement Mode Field Effect Transistor

STM4470E SamHop Microelectronics Corp.

May.

15 2007 ver1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V F E AT UR E S S uper high dense cell design for low R DS (ON ).

ID 9.5A RDS(ON) ( m ı Ω ) Max 12 @ VGS = 10V 15 @ VGS = 4.5V R ugged and reliable.

S urface Mount P ackage.

E S D P rotected.

SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain