Datasheet4U Logo Datasheet4U.com

STM4433A - P-Channel Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet preview – STM4433A

Datasheet Details

Part number STM4433A
Manufacturer SamHop Microelectronics
File Size 587.50 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STM4433A Datasheet
Additional preview pages of the STM4433A datasheet.

📁 Similar Datasheet

  • STM4433 - P-Channel 30V MOSFET (VBsemi)
  • STM4437 - P-Channel 30V MOSFET (VBsemi)
  • STM4439A - P-Channel 30V MOSFET (VBsemi)
  • STM4417 - P-Channel Enhancement Mode Field Effect Transistor (SamHop)
  • STM4472 - N-Channel 40V MOSFET (VBsemi)
  • STM400-05B - RF Power Module (ST Microelectronics)
  • STM4532 - N- and P-Channel 30V MOSFET (VBsemi)
  • STM4639 - P-Channel MOSFET (VBsemi)
  • STM4639T - P-Channel 30V MOSFET (VBsemi)
  • STM485-C - RS-232 to RS-485 Passive Converter (ETC)
Other Datasheets by SamHop Microelectronics
  • STM4433 - P-Channel Enhancement Mode MOSFET
  • STM4431 - P-Channel Enhancement Mode Field Effect Transistor
  • STM4432 - N-Channel MOSFET
  • STM4435 - P-Channel Enhancement Mode Field Effect Transistor
  • STM4436 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • STM4437 - P-Channel Enhancement Mode MOSFET
  • STM4437A - P-Channel Enhancement Mode Field Effect Transistor
  • STM4439 - P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
S T M4433A S amHop Microelectronics C orp. J an.25 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -6A R DS (ON) S uper high dense cell design for low R DS (ON ). 35 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -30 20 -6 -30 -1.7 2.
Published: |