SPP2337 Datasheet (SYNC POWER) - P-Channel Enhancement Mode MOSFET

SPP2337, P-Channel Enhancement Mode MOSFET

The SPP2337 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

SPP2337 Features

* -100V/-1.5A,RDS(ON)= 300mΩ@VGS=-10V

* -100V/-1.2A,RDS(ON)= 360mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2024/03/21 Ver.