SPN8632 Datasheet (SYNC POWER)

SPN8632, N-Channel MOSFET

The SPN8632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , note

SPN8632 Features

* 30V/96A,RDS(ON)=4.2mΩ@VGS=10V

* 30V/96A,RDS(ON)=6mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* PPAK3x3-8L package design APPLICATIONS

* MB/VGA/Vcore

* POL Applications

* SMPS 2