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SPN6561 Dual N-Channel MOSFET

SPN6561 Description

SPN6561 Dual N-Channel Enhancement Mode MOSFET .
The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

SPN6561 Features

* N-Channel 30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) PART MARKING 2020/02/20 Ver.3

SPN6561 Applications

* such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/

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Datasheet Details

Part number
SPN6561
Manufacturer
SYNC POWER
File Size
306.81 KB
Datasheet
SPN6561_SYNCPOWER.pdf
Description
Dual N-Channel MOSFET

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