SPN4810 Datasheet (SYNC POWER)

SPN4810, N-Channel MOSFET

The SPN4810 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , note

SPN4810 Features

* 100V/14A,RDS(ON)=8.5mΩ@VGS=10V

* 100V/10A,RDS(ON)=10.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design PIN CONFIGURATION(SOP

* 8) 2020/03/27 Ver 2 PART M