SPN3406 Datasheet (SYNC POWER)

SPN3406, N-Channel MOSFET

The SPN3406 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

SPN3406 Features

* 30V/5.4A,RDS(ON)=40mΩ@VGS=10V

* 30V/4.6A,RDS(ON)=50mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/17 Ver.4 Pag