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SPN2322 Dual N-Channel MOSFET

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Description

SPN2322 Dual N-Channel Enhancement Mode MOSFET .
The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number
SPN2322
Manufacturer
SYNC POWER
File Size
529.91 KB
Datasheet
SPN2322-SYNCPOWER.pdf
Description
Dual N-Channel MOSFET

Features

* 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
* 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
* 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter PIN CONFIGURATION(TDFN2x2
* 6L) PART MARKING 2020/05/18 Ver.2 Page 1 SPN2322 Dual N-Channel Enhancement Mode MOSFET PIN DE

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