Description
SPN2322 Dual N-Channel Enhancement Mode MOSFET .
The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
Features
* 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
* 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
* 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
* Super high density cell design for extremely low
RDS(ON)
* Exceptional on-resistance and maximum DC
current capability
Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter
PIN CONFIGURATION(TDFN2x2
* 6L)
PART MARKING
2020/05/18 Ver.2
Page 1
SPN2322
Dual N-Channel Enhancement Mode MOSFET
PIN DE