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FLM7179-18F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 42.5dBm (Typ.) • High Gain: G1dB = 8.0dB (Typ.) • High PAE: hadd = 30% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 7.1 to 7.9GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM7179-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.