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VNS3NV04DP-E Automotive OMNIFET II fully autoprotected Power MOSFET

VNS3NV04DP-E Description

VNS3NV04DP-E Automotive OMNIFET II fully autoprotected Power MOSFET Datasheet - production data SO-8 * Linear current limitation * Thermal.
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package.

VNS3NV04DP-E Features

* Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 120 m 3.5 A 40 V
* AEC-Q100 qualified

VNS3NV04DP-E Applications

* Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin.  Package SO-8 Table 1. Device summary Order codes Tray Tape and reel VNS3NV04DP-E VNS3NV04DPTR-E July 2023

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Automotive OMNIFET fully autoprotected Power MOSFET STMicroelectronics
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