VND5N07 fully autoprotected Power MOSFET

STMicroelectronics

Description

VND5N07 OMNIFET II fully autoprotected Power MOSFET .
The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to.

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Datasheet Specifications

Part number: VND5N07
Manufacturer: STMicroelectronics ↗
File Size: 612.67 KB
Datasheet: VND5N07_STMicroelectronics.pdf
Description: fully autoprotected Power MOSFET

Features

* Max. on-state resistance (per ch. ) Current limitation (typ) ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V uct(s
* Linear current limitation rod
* Thermal shutdown P
* Short circuit protection te
* Integrated clamp le
* Low current drawn from input pin so

Applications

* Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Package Tube Order codes Tape and reel DPAK VND5N07 VND5N0713TR IPAK VND5N07

VND5N07 Distributors

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VND5N07 fully autoprotected Power MOSFET STMicroelectronics

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