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VND10N06 - fully autoprotected Power MOSFET

VND10N06 Description

VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET .
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power.

VND10N06 Features

* Max on-state resistance (per ch. ) Current limitation (typ) Drain-Source clamp voltage RDS(on) Ilim VCLAMP 0.3Ω 10A 60V
* Linear current limitation
* Thermal shutdown
* Short circuit protection
* Integrated clamp
* Low current drawn from input pin
* Logic level input thres

VND10N06 Applications

* Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Table 1. Device summary Package DPAK IPAK Tube VND10N06 VND10N06-1 Order codes Tape and reel VND10N06TR September 2013 Rev 4 1/25 www. st. com 25 Contents Contents VND10N06 / VN

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fully autoprotected Power MOSFET STMicroelectronics
STMicroelectronics VND10N06-like datasheet