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STTH1R02 Ultrafast recovery diode

STTH1R02 Description

STTH1R02 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 1.5 A 200 V 175° C 0.7 V 15 ns .
The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

STTH1R02 Features

* Very low conduction losses
* Negligible switching losses
* Low forward and reverse recovery times

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Ultrafast recovery diode STMicroelectronics
STMicroelectronics STTH1R02-like datasheet