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STPSC6TH13TI Datasheet - STMicroelectronics

STPSC6TH13TI Dual 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern.

STPSC6TH13TI Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Suited for specific bridge-less topologies

* High forward surge capability

* Insulated package:

* Capacitance: 7 pF

* Insulated voltage: 2500 V rms Datasheet - production data

STPSC6TH13TI Datasheet (170.14 KB)

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Datasheet Details

Part number:

STPSC6TH13TI

Manufacturer:

STMicroelectronics ↗

File Size:

170.14 KB

Description:

Dual 650v power schottky silicon carbide diode.

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STPSC6TH13TI Dual 650V power Schottky silicon carbide diode STMicroelectronics

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