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STPSC40H12C-Y Datasheet - STMicroelectronics

STPSC40H12C-Y, power Schottky silicon carbide diode

STPSC40H12C-Y Datasheet 40 A 1200 V power Schottky silicon carbide diode Product status link STPSC40H12C-Y Product summary IF(AV) 2 x 20 A VRRM .
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.
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STPSC40H12C-Y-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC40H12C-Y

Manufacturer:

STMicroelectronics ↗

File Size:

251.25 KB

Description:

power Schottky silicon carbide diode

Features

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high-voltage periphery
* PPAP capable
* Operating Tj from -40 °C to 175 °C

Applications

* OBC (On Board Battery chargers)
* PHEV - EV charging stations
* Resonant LLC topology

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