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STPSC2H12-Y 2A power Schottky silicon carbide diode

STPSC2H12-Y Description

STPSC2H12-Y Datasheet Automotive 1200 V, 2 A power Schottky silicon carbide diode Product label Product status link STPSC2H12-Y Product summary IF.
The SiC diode is an ultra-high performance power Schottky diode.

STPSC2H12-Y Features

* AEC-Q101 qualified
* PPAP capable
* No or negligible reverse recovery
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* Creepage distance of 3 mm as per IEC 60664-1

STPSC2H12-Y Applications

* Bootstrap function of SiC MOS-FETS
* Snubber diode

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power Schottky silicon carbide diode STMicroelectronics
STMicroelectronics STPSC2H12-Y-like datasheet