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STPSC16H065C Datasheet - STMicroelectronics

STPSC16H065C 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern.

STPSC16H065C Datasheet (99.29 KB)

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Datasheet Details

Part number:

STPSC16H065C

Manufacturer:

STMicroelectronics ↗

File Size:

99.29 KB

Description:

650v power schottky silicon carbide diode.

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STPSC16H065C 650V power Schottky silicon carbide diode STMicroelectronics

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