Datasheet4U Logo Datasheet4U.com

STP8NK80ZFP - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STP8NK80ZFP, a member of the STP8NK80Z N-CHANNEL POWER MOSFET family.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type STP8NK80Z STP8NK80ZFP STW8NK80Z VDSS 800 V 800 V 800 V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω ID 6.2 A 6.2 A 6.2 A.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.

📥 Download Datasheet

Datasheet preview – STP8NK80ZFP

Datasheet Details

Part number STP8NK80ZFP
Manufacturer STMicroelectronics
File Size 395.37 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STP8NK80ZFP Datasheet
Additional preview pages of the STP8NK80ZFP datasheet.

📁 Similar Datasheet

  • STP8NK80ZFP - N-Channel MOSFET (INCHANGE)
  • STP8NK80Z - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STP8NK85Z - N-CHANNEL Zener-Protected SuperMESH MOSFET (ST Microelectronics)
  • STP8NK100Z - N-CHANNEL Zener-Protected SuperMESH TM MOSFET (ST Microelectronics)
  • STP8N65M5 - Power MOSFETs (ST Microelectronics)
  • STP8N65M5 - N-Channel MOSFET (INCHANGE)
  • STP8NA50 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (ST Microelectronics)
  • STP8NA50FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (ST Microelectronics)
  • STP8NC50 - N - CHANNEL POWER MOSFET (ST Microelectronics)
  • STP8NC50-1 - N-CHANNEL POWER MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type STP8NK80Z STP8NK80ZFP STW8NK80Z VDSS 800 V 800 V 800 V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω ID 6.2 A 6.2 A 6.2 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Published: |