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STP150N10F7 N-CHANNEL POWER MOSFET

STP150N10F7 Description

STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages Datasheet * production.
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, whil.

STP150N10F7 Features

* Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity

STP150N10F7 Applications

* Switching applications Figure 1. Internal schematic diagram ' 7$%

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STP150N10F7-like datasheet