STO67N60DM6 N-channel Power MOSFET

STMicroelectronics

STO67N60DM6 Description

STO67N60DM6 Datasheet N-channel 600 V, 48 mΩ typ., 58 A MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source .
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

STO67N60DM6 Features

* Order code VDS RDS(on) max. ID STO67N60DM6 600 V 59 mΩ 58 A
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate charge, input capacitance and resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness

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Datasheet Details

Part number: STO67N60DM6
Manufacturer: STMicroelectronics ↗
File Size: 1.52 MB
Datasheet: STO67N60DM6-STMicroelectronics.pdf
Description: N-channel Power MOSFET

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N-channel Power MOSFET STMicroelectronics

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