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STL8DN10LF3 - Dual N-channel Power MOSFET

Description

This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Table 1.

Features

  • 3RZHU)/$7Œ[GRXEOHLVODQG Order code STL8DN10LF3 VDS 100 V RDS(on) max 35 mΩ ID 7.8 A.
  • Designed for automotive.

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Datasheet Details

Part number STL8DN10LF3
Manufacturer STMicroelectronics
File Size 877.70 KB
Description Dual N-channel Power MOSFET
Datasheet download datasheet STL8DN10LF3 Datasheet
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Full PDF Text Transcription

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STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features 3RZHU)/$7Œ[GRXEOHLVODQG Order code STL8DN10LF3 VDS 100 V RDS(on) max 35 mΩ ID 7.8 A • Designed for automotive applications and AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable flank package Figure 1. Internal schematic diagram Applications • Switching applications Description This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Order code STL8DN10LF3 Table 1.
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