STL140N6F7 Datasheet - STMicroelectronics

STL140N6F7, N-CHANNEL POWER MOSFET

S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

* Order code VDS RDS(on) max. STL140N6F7 60 V 2.8 mΩ
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness
* Logic level VGS(th) ID 140 A PTOT 125 W D(5, 6, 7, 8)

STL140N6F7-STMicroelectronics.pdf