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STH410N4F7-6AG, STH410N4F7-2AG N-channel Power MOSFET

STH410N4F7-6AG Description

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datashee.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

STH410N4F7-6AG Features

* Order code VDS STH410N4F7-2AG 40 V STH410N4F7-6AG RDS(on) max. 1.1 mΩ ID 200 A PTOT 365 W

STH410N4F7-6AG Applications

* and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: STH410N4F7-6AG, STH410N4F7-2AG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
STH410N4F7-6AG, STH410N4F7-2AG
Manufacturer
STMicroelectronics ↗
File Size
683.94 KB
Datasheet
STH410N4F7-2AG-STMicroelectronics.pdf
Description
N-channel Power MOSFET
Note
This datasheet PDF includes multiple part numbers: STH410N4F7-6AG, STH410N4F7-2AG.
Please refer to the document for exact specifications by model.

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N-channel Power MOSFET STMicroelectronics
STMicroelectronics STH410N4F7-6AG-like datasheet