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STH315N10F7-2 Datasheet - STMicroelectronics

STH315N10F7-2, Automotive-grade N-channel 100V 180A Power MOSFET

STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packag.
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, whil.
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STH315N10F7-2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STH315N10F7-2

Manufacturer:

STMicroelectronics ↗

File Size:

792.64 KB

Description:

Automotive-grade N-channel 100V 180A Power MOSFET

Features

* TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity

Applications

* S(2, 3) for H2PAK-2 S(2, 3, 4, 5, 6, 7) for H 2PAK-6 N-CHG1DTABS23_2_6

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