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STH275N8F7-2AG - N-CHANNEL POWER MOSFET

STH275N8F7-2AG Description

STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 Datasheet - prod.
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, whil.

STH275N8F7-2AG Features

* Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STH275N8F7-2AG-like datasheet