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STH15810-2
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS STH15810-2 100 V
RDS(on)max 0.0039 Ω
ID 110 A
PTOT 250 W
100% avalanche tested Ultra low on-resistance
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STH15810-2
Table 1: Device summary
Marking
Package
15810
H²PAK-2
Packaging Tape and reel
January 2017
DocID025819 Rev 3
This is information on a product in full production.
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STH15810-2 Datasheet
