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STGWT60H65DFB, STGW60H65DFB - Trench gate field-stop IGBT

STMicroelectronics

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STGWT60H65DFB Datasheet Preview — This datasheet PDF includes multiple part numbers: STGWT60H65DFB, STGW60H65DFB. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number: STGWT60H65DFB, STGW60H65DFB
Manufacturer: STMicroelectronics ↗
File Size: 685.37 KB
Datasheet: STGW60H65DFB-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT
Note: This datasheet PDF includes multiple part numbers: STGWT60H65DFB, STGW60H65DFB.
Please refer to the document for exact specifications by model.

STGWT60H65DFB Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Trench gate field-stop IGBT STMicroelectronics

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