STGWA30H65FB IGBT

STMicroelectronics

STGWA30H65FB Description

STGWA30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package Datasheet - production data Figure 1: Inte.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

STGWA30H65FB Features

* Maximum junction temperature: TJ = 175 °C
* High-speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V(typ) @ IC = 30 A
* Safe paralleling
* Tight parameter distribution

STGWA30H65FB Applications

* Photovoltaic inverters

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Datasheet Details

Part number: STGWA30H65FB
Manufacturer: STMicroelectronics ↗
File Size: 746.62 KB
Datasheet: STGWA30H65FB-STMicroelectronics.pdf
Description: IGBT

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