STGW40H65DFB IGBT

STMicroelectronics

STGW40H65DFB Description

STGW40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT 3 2 1 TO-247 .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGW40H65DFB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temperature c

STGW40H65DFB Applications

* Photovoltaic inverters

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Datasheet Details

Part number: STGW40H65DFB
Manufacturer: STMicroelectronics ↗
File Size: 498.84 KB
Datasheet: STGW40H65DFB-STMicroelectronics.pdf
Description: IGBT

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