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STG35M120F3D7 IGBT

STG35M120F3D7 Description

STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG35M120F3D7 Features

* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ. ) @ IC = 35 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

STG35M120F3D7 Applications

* Motor control E
* Industrial drives EGCD
* PFC
* UPS
* Solar

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IGBT STMicroelectronics
STMicroelectronics STG35M120F3D7-like datasheet