STG35M120F3D7 Datasheet - STMicroelectronics

STG35M120F3D7, IGBT

STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG35M120F3D7-STMicroelectronics.pdf

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Datasheet Details

Part number:

STG35M120F3D7

Manufacturer:

STMicroelectronics ↗

File Size:

179.70 KB

Description:

IGBT

Features

* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ. ) @ IC = 35 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

Applications

* Motor control E
* Industrial drives EGCD
* PFC
* UPS
* Solar

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