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STD64N4F6AG - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code STD64N4F6AG VDS 40 V RDS(on) max. 8.2 mΩ ID 54 A PTOT 60 W.
  • Designed for automotive.

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STD64N4F6AG Automotive-grade N-channel 40 V, 7 mΩ typ., 54 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STD64N4F6AG VDS 40 V RDS(on) max. 8.2 mΩ ID 54 A PTOT 60 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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