STD28P3LLH6AG Datasheet (STMicroelectronics)

STD28P3LLH6AG, P-channel Power MOSFET

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STD28P3LLH6AG Table 1: Device summary Marking Package 28P3LLH6 DPAK Packing Tape and reel Sep

STD28P3LLH6AG Features

* Order code VDS STD28P3LLH6AG -30V RDS(on) max. 0.030Ω ID PTOT -12A 33W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM11258v1

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggednes