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STD180N4F6 N-channel Power MOSFET

STD180N4F6 Description

STD180N4F6 N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - preliminary data Figure 1: Internal schematic d.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

STD180N4F6 Features

* Order code STD180N4F6 VDS 40 V RDS(on) max. 2.8 mΩ ID 80 A PTOT 130 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

STD180N4F6 Applications

* Switching applications

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