Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltaApplications
* APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s 1 I2PAK (Tabless TO-220) 23 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGSSTB4NC80Z_STMicroelectronics.pdf
Datasheet Details
Part number:
STB4NC80Z-1, STB4NC80Z
Manufacturer:
File Size:
445.83 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: STB4NC80Z-1, STB4NC80Z.
Please refer to the document for exact specifications by model.
STB4NC80Z-1 Distributors
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