STB25N80K5 Datasheet - STMicroelectronics

STB25N80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order .

STB25N80K5 Features

* Order code VDS @ TJmax RDS(on) max ID PTOT STB25N80K5 250 W STF25N80K5 STP25N80K5 STW25N80K5 800 V < 0.260 Ω 19.5 A 40 W 250 W

* Industry’s lowest RDS(on) x area

* Industry’s best figure of merit (FoM

* Ultra low gate charge

* 100% avalanche tested

STB25N80K5 Datasheet (957.44 KB)