STAC2932F Datasheet - STMicroelectronics

STAC2932F, RF power transistor

STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs

Features

* Gold metallization
* Excellent thermal stability
* Common source push-pull configuration
* POUT = 300 W min. with 20 dB gain @ 175 MHz
* In compliance with the 2002/95/EC European directive

Applications

* up to 250 MHz. Figure 1. Pin connection 1 The STAC2932F benefits from the latest 1 generation of efficient, patent-pending package technology, otherwise known as STAC™. 2 2 3 1. Drain 2. Gate 3. Source (Bottom side) Table 1. Device summary Order code Marking Base qty. Package STAC2932

STAC2932F-STMicroelectronics.pdf