ST50V10200 Datasheet - STMicroelectronics

ST50V10200, RF power LDMOS transistor

ST50V10200 Datasheet RF power LDMOS transistor for frequencies up to 1.5 GHz M246 12 1-2 Drain 4-5 Gate 5 3 4 3 Source

Features

* Order code FREQ VDD POUT (typ. ) Gain ST50V10200 1000 MHz 50 V 200 W 18 dB
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate/source voltage range
* In compliance with the European Directive 2002/95/EC N

Applications

* Broadband communications
* Industrial, scientific and medical (ISM)

ST50V10200-STMicroelectronics.pdf