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ST16010 - 28V RF Power LDMOS transistor

Datasheet Summary

Description

The ST16010 is a 10 W, 28 V LDMOS transistor designed for wideband radio, Avionics and ISM applications at frequencies up to 1.6 GHz.

Features

  • Order code Frequency VDD POUT Gain Efficiency ST16010 930 MHz 28 V 10 W 23 dB 58%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • In compliance with the european directive 2002/95/EC.

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Datasheet preview – ST16010

Datasheet Details

Part number ST16010
Manufacturer STMicroelectronics
File Size 1.22 MB
Description 28V RF Power LDMOS transistor
Datasheet download datasheet ST16010 Datasheet
Additional preview pages of the ST16010 datasheet.

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Full PDF Text Transcription

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ST16010 Datasheet 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor 1 3 2 MM Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency ST16010 930 MHz 28 V 10 W 23 dB 58% • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Applications • Telecom and wideband communication • Industrial, scientific and medical • Avionics Description The ST16010 is a 10 W, 28 V LDMOS transistor designed for wideband radio, Avionics and ISM applications at frequencies up to 1.6 GHz.
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