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SD56120M - RF POWER TRANSISTORS

SD56120M Description

SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General .
The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial a.

SD56120M Features

* Excellent thermal stability
* Common source configuration Push-pull
* POUT = 120W with 13dB gain @ 860MHz / 32V
* BeO free package

SD56120M Applications

* at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity. M252 Epoxy sealed Pin connection 12 3 54 1. Drain 2. Drain 3. Source

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POWER TRANSISTORS STMicroelectronics
STMicroelectronics SD56120M-like datasheet