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SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

The SCTH40N120G2V7AG by STMicroelectronics is a Automotive-grade silicon carbide Power MOSFET. Below is the official datasheet preview.

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SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Official preview page of the SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET datasheet (STMicroelectronics).

Datasheet Details

Part number	SCTH40N120G2V7AG
Manufacturer	STMicroelectronics
File Size	371.10 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTH40N120G2V7AG-STMicroelectronics.pdf
Additional preview pages of the SCTH40N120G2V7AG datasheet.

SCTH40N120G2V7AG Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

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Published: Apr 15, 2020 |