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SCT040H120G3-7 - Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCT040H120G3-7
Manufacturer	STMicroelectronics
File Size	367.52 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCT040H120G3-7-STMicroelectronics.pdf

SCT040H120G3-7 Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) typ. ID SCT040H120G3-7 1200 V 40 mΩ 40 A.
Very fast and robust intrinsic body diode.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Source sensing pin for increased efficiency.

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Published: Sep 21, 2024 |