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RF4L10700CB4 RF power LDMOS transistor

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Description

RF4L10700CB4 Datasheet 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B .
The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz fr.

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Features

* Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched pair transistors in push-pull configuration
* Large positive and negative

Applications

* Excellent thermal stability, low HCI drift
* In compliance with the European directive 2002/95/EC Applications
* ISM

RF4L10700CB4 Distributors

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