Q1NK80ZR Datasheet (STMicroelectronics)

Q1NK80ZR, N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

Q1NK80ZR Features

* TYPE VDSS RDS(on) ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 Ω < 16 Ω < 16 Ω < 16 Ω 0.3 A 0.25A 1.0 A 1.0 A 3W 2.5 W 45 W 45 W

* TYPICAL RDS(on) = 13Ω

* EXTREMELY HIGH dv/dt CAPABILITY

* ESD IMPROVED CAPABILITY

* 100% AVALANCHE TESTED