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PD57070-E - RF POWER transistor

PD57070-E Description

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

PD57070-E Features

* Excellent thermal stability
* Common source configuration
* POUT = 70 W with 14.7dB gain @945 MHz/28 V

PD57070-E Applications

* It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solut

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POWER transistor STMicroelectronics
STMicroelectronics PD57070-E-like datasheet