PD57030-E Datasheet PDF (RF POWER transistor) | Download STMicroelectronics PD57030-E

PD57030-E - RF POWER transistor

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies up to 1 GHz.

Features

Excellent thermal stability.
Common source configuration.
POUT = 30 W with 14dB gain @ 945 MHz / 28 V.
New RF plastic package.

Datasheet Details

Part number	PD57030-E
Manufacturer	STMicroelectronics
File Size	474.18 KB
Description	RF POWER transistor
Datasheet	PD57030-E Datasheet
Additional preview pages of the PD57030-E datasheet.

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Full PDF Text Transcription

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PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications.

Published: Sep 20, 2018 |