P50N06 Datasheet (STMicroelectronics)

P50N06, STP50N06

www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOL