L5NK65Z - N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET

STMicroelectronics

Datasheet Details

Part number	L5NK65Z
Manufacturer	STMicroelectronics
File Size	119.88 KB
Description	N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET
Datasheet	L5NK65Z_STMicroelectronics.pdf

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/6 STL5NK65Z EL.

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Published: Mar 22, 2005 |