H32N65DM6 N-channel Power MOSFET

STMicroelectronics

Description

SH32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 89 mΩ typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package 89 .
This device combines two MOSFETs in a half-bridge topology.

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Datasheet Specifications

Part number: H32N65DM6
Manufacturer: STMicroelectronics ↗
File Size: 471.55 KB
Datasheet: H32N65DM6-STMicroelectronics.pdf
Description: N-channel Power MOSFET

Features

* Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A
* AQG 324 qualified
* Half-bridge power module
* 650 V blocking voltage
* Fast recovery body diode
* Very low switching energies
* Low package inductance
* Dice on direct bond cop

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H32N65DM6 N-channel Power MOSFET STMicroelectronics

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